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PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z) 3rd Edition Apr. 1999 Application
* Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). * For 4.8 V nominal battery use
Features
* * * * * * 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 x 13.75 x 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800
PF08103A
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Select and Power Control (H: 2 V Min, L: 0.3 V Max)
Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V
Current of Control Pin
Control Pin VCTL Equivalent Input Circuit Control Current 160 A Max at 3 V
VCTL
80 A Max at 3 V
Vapc
3 mA Max at 3 V
2
PF08103A
Internal Diagram and External Circuit
4 Pout GSM 8 Pin 5 Pout DCS Z1 Bias circuit 6 Vdd1 VCTL C3 C1 FB Pin Vdd1 VCTL FB VCTL 1 VCTL C5 2 Vapc C6 7 Vdd2 C7 C2 FB Vapc Vdd2 Pout DCS Pout GSM C4 3 Z2 Z3
Note: C1 = C2 = 4.7 F TANTALUM ELECTROLYTE C3 = C4 = 0.01 F CERAMIC CHIP C5 = C6 = C7 = 1000 pF CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 MICRO STRIP LINE
3
PF08103A
Absolute Maximum Ratings (Tc = 25C)
Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.5 3 3 4 4 10 -30 to +100 -30 to +100 5 3 Unit V A A V V dBm C C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz).
Electrical Characteristics for DC (Tc = 25C)
Item Drain cutoff current Symbol Ids Min -- -- Typ -- -- Max 20 300 Unit A A Test Condition Vdd = 6.0 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V Vdd = 8.5 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = -20 to +80C VCTL = 3.0 V VCTL = 3.0 V
VCTL control current VCTL control current
I CTL I CTL
-- --
100 50
160 80
A A
4
PF08103A
Electrical Characteristics for GSM900 mode (Tc = 25C)
Test conditions unless otherwise noted:
f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V CTL = 2.0V, VCTL = 0.3V, Rg = Rl = 50, Tc = 25C, Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Vapc control current Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f Vapc Iapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) -- -- Min 880 0.2 -- 43 -- -- -- -- 35.0 33.0 -- -- Typ -- -- -- 48 -45 -45 -- 2 35.7 34.0 -40 -30 Max 915 3.0 3 -- -35 -35 -35 3 -- -- -20 -20 Unit MHz V mA % dBc dBc dBc -- dBm dBm dBm dBm Vapc = 3.0V Vdd = 4.2V, Vapc = 3.0V, Tc = +85C, Pin = +3dBm Vapc = 0.2 V Pout GSM = 34.5dBm (GSM mode) Measured at f = 1760 to 1830MHz Pout = -15 to 35.0dBm Vapc = 3.0V Pout
GSM
Test Condition
= 34.5dBm,
Vapc = control
tr, tf --
--
1
2
s --
GSM
No parasitic oscillation All spuriouses < -36 dBm
VDD = 4.2 to 6.3V, Pout 35.0dBm, Vapc 3.0V GSM pulse. Rg = 50, Tc = -20 to +85C, Output VSWR = 6 : 1 All phases, RES BW = 3MHz VDD = 4.2 to 6.3V, Pout GSM 35.0dBm, Vapc 3.0V GSM pulse. Rg = 50, t = 30sec., Tc = -20 to +85C, Output VSWR = 10 : 1 All phases f0 = 915MHz, frx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz f0 = 915MHz, frx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz frx = 1805 to 1880MHz Pout GSM = 35dBm, RES BW = 100kHz Pout
GSM
Load VSWR tolerance
--
No degradation or Permanent degradation
--
Noise power
Pnoise1 Pnoise2 Pnoise3
-- -- -- --
-- -- -- --
-73 -85 -77 200
dBm dBm dBm dB/V
Slope Pout/Vapc
--
= 0 to 35dBm
5
PF08103A
Electrical Characteristics for DCS1800 mode (Tc = 25C)
Test conditions unless otherwise noted:
f = 1710 to 1785MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, V CTL = 0.3V, VCTL = 2.0V, Rg = Rl = 50, Tc = 25C, Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Vapc control current Total efficiency 2nd harmonic distortion 3rd harmonic distortion 4th~8th harmonic distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability Symbol f Vapc Iapc T 2nd H.D. 3rd H.D. 4th~8th H.D. VSWR (in) Pout (1) Pout (2) -- tr, tf -- Min 1710 0.2 -- 33 -- -- -- -- 32.5 31 -- -- Typ -- -- -- 36 -45 -45 -- 3 33.0 31.5 -35 1 Max 1785 3.0 3 -- -35 -35 -35 5 -- -- -30 2 Unit MHz V mA % dBc dBc dBc -- dBm dBm dBm s -- Vapc = 3.0V Vdd = 4.8V, Vapc = 3.0V, Tc = +85C, Pin = +3dBm Vapc = 0.2V Pout
DCS
Test Condition
Vapc = 3.0V Pout
DCS
= 31.5dBm,
Vapc = control
= -15 to 32.0dBm
No parasitic oscillation
VDD = 4.2 to 6.3V, Pout DCS 32.5dBm, Vapc 3.0V DCS pulse. Rg = 50, Tc = -20 to +85C, Output VSWR = 6 : 1 All phases VDD = 4.2 to 6.3V, Pout DCS 32.5dBm, Vapc 3.0V DCS pulse. Rg = 50, t = 30sec., Tc = -20 to +85C, Output VSWR = 10 : 1 All phases f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 31.5dBm, RES BW = 30kHz frx = 925 to 935MHz, Pout DCS = 31.5dBm, RES BW = 30kHz frx = 935 to 960MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Pout
DCS
Load VSWR tolerance
--
No degradation
--
Noise power
Pnoise1 Pnoise2 Pnoise3
-- -- -- -- --
-- -- -- -- --
-77 -74 -85 200 -20
dBm dBm dBm dB/V dBm
Slope Pout/Vapc Intermodulation
-- --
= 0 to 32.0dBm
Pout = 31.5dBm, Interferer.CW f0 +800kHz, Pinterfer = -9dBm, RES BW = 300kHz, Measure at f0 -800kHz
6
PF08103A
Package Dimensions
Unit: mm 1.8 0.2 8 7 G 6 5
G
G
1
2
G 3 (Upper side)
4 G 65 G
11.0 0.3
11.0 0.3
(10.8)
8 13.75 0.3
7
G 13.75 0.3 (5.40) (5.40) (3.30) (3.30) (1.60)(1.60) (3.40) (1.60)(1.60) (1.40) (1.40) (1.40) 1 (1.40)
2
G
3
4
(1.40) (3.40)
(1.40)
(2.40) (2.40)
11.0 0.3
Pin arrangement 1 : VCTL 2 : VCTL 3 : Vdd2 4 : Pout GSM 5 : Pout DCS 6 : Vdd1 7 : Vapc 8 : Pin G : GND
(3.70)
(3.70)
(2.50) (2.50) (Bottom side)
Remark: Coplanarity of bottom side of terminals are less than 0 0.1mm.
Hitachi Code JEDEC EIAJ Weight (reference value) RF-O
(1.40)
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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